IN-SITU INFRARED AND VISIBLE-LIGHT ELLIPSOMETRIC INVESTIGATIONS OF BORON-NITRIDE THIN-FILMS AT ELEVATED-TEMPERATURES

In situ infrared (IR) spectroscopy and visible-light (VIS) spectroscop ic ellipsometry over the spectral range from 700 to 2000 cm(-1) and 1. 5-3.5 eV, respectively, were used to investigate the optical behavior of boron nitride (BN) thin films at temperatures from room temperature (RT) to 600 degrees C. The polycrystalline hexagonal (h) and mixed-ph ase h- and cubic (c)-BN thin films were deposited by magnetron sputter ing on [001] silicon. We observe a reversible moisture incorporation p rocess in as-grown h-BN samples. When stored in normal ambient, the h- BN thin films absorb water into thin-film micropores. When annealed in ultrahigh vacuum or a dry nitrogen atmosphere, the samples expel mois ture but retain their microstructure. This is observable by reduction of the thin-film refractive indices in accordance with changes in the IR lattice resonance behavior. The optical properties of high c-BN con tent thin films remain unchanged during annealing. And both intrinsic h- and c-BN thin-film VIS refractive indices are nearly temperature in dependent, at least up to 600 degrees C. Therefore, RT BN optical cons tants can be used for feedback loop control in in situ thin-film growt h at temperatures up to 600 degrees C.