LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF TITANIUM NITRIDE FILMS

We used a 193 nm ArF excimer laser to assist chemical vapor deposition of titanium nitride (TiN) films on Si (100) and SiO2. The source gase s were tetrakis(dimethylamido) titanium (TDMAT) or tetrakis(diethylami do)titanium (TDEAT) mixed with ammonia. A correct stoichiometry was co nfirmed from Auger spectra. The laser helped to enhance TiN deposition rates at low temperatures (100 degrees C for TDMAT-NH3 and 200 degree s C for TDEAT-NH3). At higher temperatures the deposition rates decrea sed with an increasing laser energy density. Under irradiation the ele ctrical resistivity of the TiN films was lowered. The laser-induced ef fect on electrical resistivity was particularly pronounced at low temp eratures. A good conformality of the TiN films for contact holes with high aspect ratios was demonstrated. (C) 1998 American Institute of Ph ysics.