We used a 193 nm ArF excimer laser to assist chemical vapor deposition
of titanium nitride (TiN) films on Si (100) and SiO2. The source gase
s were tetrakis(dimethylamido) titanium (TDMAT) or tetrakis(diethylami
do)titanium (TDEAT) mixed with ammonia. A correct stoichiometry was co
nfirmed from Auger spectra. The laser helped to enhance TiN deposition
rates at low temperatures (100 degrees C for TDMAT-NH3 and 200 degree
s C for TDEAT-NH3). At higher temperatures the deposition rates decrea
sed with an increasing laser energy density. Under irradiation the ele
ctrical resistivity of the TiN films was lowered. The laser-induced ef
fect on electrical resistivity was particularly pronounced at low temp
eratures. A good conformality of the TiN films for contact holes with
high aspect ratios was demonstrated. (C) 1998 American Institute of Ph
ysics.