DEPENDENCE OF LATERAL OXIDATION RATE ON THICKNESS OF ALAS LAYER OF INTEREST AS A CURRENT APERTURE IN VERTICAL-CAVITY SURFACE-EMITTING LASERSTRUCTURES

Authors
KOLEY B DAGENAIS M JIN R SIMONIS G PHAM J MCLANE G JOHNSON F WHALEY R
Citation
B. Koley et al., DEPENDENCE OF LATERAL OXIDATION RATE ON THICKNESS OF ALAS LAYER OF INTEREST AS A CURRENT APERTURE IN VERTICAL-CAVITY SURFACE-EMITTING LASERSTRUCTURES, Journal of applied physics, 84(1), 1998, pp. 600-605
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
84
Issue
1
Year of publication
1998
Pages
600 - 605
Database
ISI
SICI code
0021-8979(1998)84:1<600:DOLORO>2.0.ZU;2-V
Abstract
The dependence of the wet oxidation process on the AlAs layer thicknes s used in selectively oxidized vertical-cavity surface-emitting-laser structures is studied in detail. A theoretical model based on a diffus ion-reaction process is proposed. A rapid reduction in the oxidation r ate is predicted with a reduction in the layer thickness of the ultrat hin AlAs layer. The theoretical predictions are verified through exper iments. (C) 1998 American Institute of Physics.