TRANSFER IMPEDANCE CALCULATIONS OF ELECTRONIC NOISE IN 2-TERMINAL SEMICONDUCTOR STRUCTURES

The time-domain formulation of the transfer-impedance method is develo ped to calculate the impedance field of two-terminal semiconductor str uctures. The voltage noise spectrum associated with velocity fluctuati ons is then calculated for overmicron and submicron n(+)nn(+) GaAs dio des in the framework of a closed hydrodynamic approach based on the ve locity and energy conservation equations. Transit-time effects are fou nd to influence substantially the noise spectrum in a wide frequency r ange above 10 GHz. The good agreement found with Monte Carlo simulatio ns validates the proposed theoretical approach. (C) 1998 American Inst itute of Physics.