CONDUCTION-BAND OFFSET IN A PSEUDOMORPHIC GAAS IN0.2GA0.8AS QUANTUM-WELL DETERMINED BY CAPACITANCE-VOLTAGE PROFILING AND DEEP-LEVEL TRANSIENT SPECTROSCOPY TECHNIQUES/

The conduction-band offset Delta E-C has been determined for a molecul ar beam epitaxy grown GaAs/In0.2Ga0.8As single quantum-well structure, by measuring the capacitance-voltage (C - V) profiling, taking into a ccount a correction for the interface charge density, and the capacita nce transient resulting from thermal emission of carriers from the qua ntum well, respectively. We found that Delta E-C = 0.227 eV, correspon ding to about 89% Delta E-g, from the C - V profiling; and Delta E-C = 0.229eV, corresponding to about 89.9% Delta E-g, from the deep-level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity Delta E-C obtained from the C-V profilin g is in good agreement with that obtained from the DLTS technique. (C) 1998 American Institute of Physics.