CHARACTERIZATION OF SILICON SURFACES IN HF SOLUTION USING MICROWAVE REFLECTIVITY

Citation
A. Natarajan et al., CHARACTERIZATION OF SILICON SURFACES IN HF SOLUTION USING MICROWAVE REFLECTIVITY, Journal of applied physics, 83(4), 1998, pp. 2112-2120
Citations number
27
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
4
Year of publication
1998
Pages
2112 - 2120
Database
ISI
SICI code
0021-8979(1998)83:4<2112:COSSIH>2.0.ZU;2-4
Abstract
Determination of the band bending in a semiconductor in contact with a solution is not straightforward since the potential is partitioned be tween the space charge layer in the semiconductor and the Helmholtz la yer on the solution side of the interface. In deep depletion, a change in the applied potential usually appears across the space charge laye r, however, under conditions of weak depletion or accumulation, the ap plied potential is partitioned between the two double layers and the b and bending is usually unknown. In this article we show how microwave reflectivity measurements can be used to determine the potential distr ibution at the semiconductor/solution interface. (C) 1998 American Ins titute of Physics.