A. Natarajan et al., CHARACTERIZATION OF SILICON SURFACES IN HF SOLUTION USING MICROWAVE REFLECTIVITY, Journal of applied physics, 83(4), 1998, pp. 2112-2120
Determination of the band bending in a semiconductor in contact with a
solution is not straightforward since the potential is partitioned be
tween the space charge layer in the semiconductor and the Helmholtz la
yer on the solution side of the interface. In deep depletion, a change
in the applied potential usually appears across the space charge laye
r, however, under conditions of weak depletion or accumulation, the ap
plied potential is partitioned between the two double layers and the b
and bending is usually unknown. In this article we show how microwave
reflectivity measurements can be used to determine the potential distr
ibution at the semiconductor/solution interface. (C) 1998 American Ins
titute of Physics.