INFLUENCE OF THE SUBSTRATE ON GROWTH AND MAGNETORESISTANCE OF LA0.7CA0.3MNOZ THIN-FILMS DEPOSITED BY MAGNETRON SPUTTERING

Citation
Es. Vlakhov et al., INFLUENCE OF THE SUBSTRATE ON GROWTH AND MAGNETORESISTANCE OF LA0.7CA0.3MNOZ THIN-FILMS DEPOSITED BY MAGNETRON SPUTTERING, Journal of applied physics, 83(4), 1998, pp. 2152-2157
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
4
Year of publication
1998
Pages
2152 - 2157
Database
ISI
SICI code
0021-8979(1998)83:4<2152:IOTSOG>2.0.ZU;2-J
Abstract
Off-axis radio frequency magnetron sputtering was employed to grow La0 .7Ca0.3MnOz (LCMO) thin films onto three different types of substrates . The substrate strongly influences the structure and the colossal mag netoresistance effect of the obtained films. Single-crystalline thin f ilms were prepared on LaAlO3 (100) substrates, showing a low value of residual resistivity and a metal-insulator transition at a temperature of up to T-peak=290 K. The latter value of the transition temperature is one of the highest reported so far on thin films of the La-Ca-Mn-O system. Films deposited onto Y-stabilized ZrO2 substrates and onto Mg O substrates are polycrystalline and less textured. These films are ch aracterized by a large negative magnetoresistance ratio MR=[R(H)-R(0)] /R(0) measured for small values of the magnetic field H. For H = 1.5 k Oe, the MR was found to be approximately - 30%, - 20%, and - 8% at tem peratures of 20, 77, and 180 K, respectively. The magnetoresistance of polycrystalline LCMO films shows two contributions, a low-field MR an d a high-field MR, which are different in their dependence on temperat ure. The low-field MR is related to the magnetization process and can be attributed to scattering processes in domain walls or to tunneling of polarized charge carriers between the grains of the polycrystalline films. (C) 1998 American Institute of Physics.