DEEP LEVELS IN HEAVILY ZN-DOPED INP LAYERS IMPLANTED WITH TI AND TI P/

We have investigated deep level peaks observed in the photoluminescenc e spectrum of heavily Zn-doped InP layers grown by metalorganic chemic al vapor deposition at energies centered at 0.89 and 0.94 eV. These pe aks are enhanced when the samples are implanted with Ti. When P is co- implanted, however, the intensity of these peaks decrease, and at an i ncreased dosage, the peaks disappear from the spectrum. The peaks are, therefore, dependent on the phosphorus vacancy produced by the excess ive Zn doping or the implant damage. Hall measurement data show that t he Ti/P-implanted p-type InP layer is converted to n type with its she et resistance decreasing and the donor activation of Ti increasing for higher P co-implant dose. In addition, the photoluminescence intensit y of the deep level peaks is highly correlated with the sheet resistan ce. (C) 1998 American Institute of Physics.