PHYSICAL-PROPERTIES OF OSMIUM DOPED TIN OXIDE THIN-FILMS

The sol-gel process has been used to prepare osmium doped tin oxide th in films. The energy gap and refractive index were evaluated from opti cal measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that ma ke tin oxide doped with osmium a very interesting material for fabrica tion of low power consumption sensors for methane detection. (C) 1998 American Institute of Physics.