GATING OF INAS GASB QUANTUM-WELLS USING A SILICON MONOXIDE GATE INSULATOR/

Authors
RAHMAN F GALLAGHER BL BEHET M DEBOECK J
Citation
F. Rahman et al., GATING OF INAS GASB QUANTUM-WELLS USING A SILICON MONOXIDE GATE INSULATOR/, Applied physics letters, 73(1), 1998, pp. 88-90
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
1
Year of publication
1998
Pages
88 - 90
Database
ISI
SICI code
0003-6951(1998)73:1<88:GOIGQU>2.0.ZU;2-L
Abstract
We report on a technique we have recently developed to fabricate very high quality gates and gated structures on InAs/AlxGa1-xSb quantum wel ls. The low thermal budget process leads to highly stable gates with e xtremely low leakage currents. Both electron and hole concentrations c an be changed over a wide range by the application of modest gate volt ages. We obtain a dn/dV value of 5 x 10(11) cm(2)/V for electrons and 1.6 x 10(12) cm(2)/V for holes at 1.2 K. (C) 1998 American Institute o f Physics.