A DEEP-LEVEL INDUCED BY GAMMA-IRRADIATION IN HG1-XCDXTE

Admittance spectroscopy and deep-level transient spectroscopy measurem ents have been performed on n(+)-on-p Hg1-xCdxTe (x = 0.595) planar ph otodiodes grown by improved zone melt method. After 1.0 Mrads gamma ir radiation, a new trap center is observed at 0.19 eV above the valence band, while the well-known 0.15 eV trap level disappears. The trap den sities for these two levels are almost the same. We attribute this phe nomenon to the gamma irradiation, which produces a compound defect cor related with Hg vacancy. (C) 1998 American Institute of Physics.