LASING CHARACTERISTICS OF LOW-THRESHOLD ZNSE-BASED BLUE GREEN LASER-DIODES GROWN ON CONDUCTIVE ZNSE SUBSTRATES/

Authors
KATAYAMA K YAO H NAKANISHI F DOI H SAEGUSA A OKUDA N YAMADA T MATSUBARA H IRIKURA M MATSUOKA T TAKEBE T NISHINE S SHIRAKAWA T
Citation
K. Katayama et al., LASING CHARACTERISTICS OF LOW-THRESHOLD ZNSE-BASED BLUE GREEN LASER-DIODES GROWN ON CONDUCTIVE ZNSE SUBSTRATES/, Applied physics letters, 73(1), 1998, pp. 102-104
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
1
Year of publication
1998
Pages
102 - 104
Database
ISI
SICI code
0003-6951(1998)73:1<102:LCOLZB>2.0.ZU;2-8
Abstract
Room temperature continuous wave operation of ZnSe-based blue/green la ser diodes grown homoepitaxially on conductive ZnSe substrates with th reshold current densities as low as 176 A/cm(2) has been demonstrated. This is the lowest reported threshold among all short wavelength lase rs in the blue/green region. Lifetimes at room temperature of up to 2. 1 h have been obtained for lasers with pre-existing defect densities l ower than 3 x 10(4) cm(-2). (C) 1998 American Institute of Physics.