ELECTROLUMINESCENCE FROM SI SI OXYNITRIDE SUPERLATTICES/

The Si/Si oxynitride superlattices, with three periods, have been grow n using the two-target alternation magnetron sputtering technique. The thicknesses of Si oxynitride layers and Si layers in the superlattice s are 2.0 and 1.4 nm, respectively. Visible electroluminescence (EL) f rom a semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si str ucture has been observed. Each EL spectrum of the structure has a domi nant peak around 640 nm, a weaker peak around 520 nm, and a shoulder a round 820 nm. By comparing the EL from the semitransparent Au film/(Si /Si oxynitride) superlattice/p-Si structure with that from a semitrans parent Au film/Si oxynitride film/ p-Si structure, we found that the E L efficiency of the former structure is about 2-4 times of that of the latter one. (C) 1998 American Institute of Physics.