The Si/Si oxynitride superlattices, with three periods, have been grow
n using the two-target alternation magnetron sputtering technique. The
thicknesses of Si oxynitride layers and Si layers in the superlattice
s are 2.0 and 1.4 nm, respectively. Visible electroluminescence (EL) f
rom a semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si str
ucture has been observed. Each EL spectrum of the structure has a domi
nant peak around 640 nm, a weaker peak around 520 nm, and a shoulder a
round 820 nm. By comparing the EL from the semitransparent Au film/(Si
/Si oxynitride) superlattice/p-Si structure with that from a semitrans
parent Au film/Si oxynitride film/ p-Si structure, we found that the E
L efficiency of the former structure is about 2-4 times of that of the
latter one. (C) 1998 American Institute of Physics.