NANOSCALE SILICON WIRES SYNTHESIZED USING SIMPLE PHYSICAL EVAPORATION

Citation
Dp. Yu et al., NANOSCALE SILICON WIRES SYNTHESIZED USING SIMPLE PHYSICAL EVAPORATION, Applied physics letters, 72(26), 1998, pp. 3458-3460
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
26
Year of publication
1998
Pages
3458 - 3460
Database
ISI
SICI code
0003-6951(1998)72:26<3458:NSWSUS>2.0.ZU;2-F
Abstract
We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach, High purity SiNWs of uniform diamete rs around 15 nm were obtained by sublimating a hot-pressed silicon pow der target at 1200 degrees C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confine ment, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthe sis of other one-dimensional semiconducting, or conducting nanowires. (C) 1998 American Institute of Physics.