RECOMBINATION LIFETIME OF IN0.53GA0.47AS AS A FUNCTION OF DOPING DENSITY

We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2x10(14) to 2x10(19) cm(-3) Th ese isotype double heterostructures were doped both n and p type and w ere used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is do minated by the Shockley-Read-Hall effect. At the intermediate doping l evels, radiative recombination is dominant. At the highest doping leve ls, Auger recombination dominates as the lifetime varies with the inve rse square of the doping concentration. From fitting these data, the r adiative- and Auger-recombination coefficients are deduced. (C) 1998 A merican Institute of Physics.