EFFICIENT 300 K LIGHT-EMITTING-DIODES AT LAMBDA-SIMILAR-TO-5 AND SIMILAR-TO-8 MU-M FROM INAS IN(AS1-XSBX) SINGLE QUANTUM-WELLS/

300 K light-emitting diodes which emit at 5 and 8 mu m with quasi-cw o utput powers of up to 50 and 24 mu W, respectively, are reported. The devices have a single molecular beam epitaxy grown InAs/In(As, Sb) qua ntum well in the active region with a strong type-IIa band alignment g iving mid-IR emission at energies up to 61 % lower than the alloy band gap. The emission energies are shown to be in good agreement with a k .p bandstructure model where Q(c), the ratio of the strained conductio n-band offset to the band-gap difference between the two strained supe rlattice components, is found to be similar to 2.0. (C) 1998 American Institute of Physics.