SMALL-SIGNAL ELECTRON CHARGE CENTROID MODEL FOR QUANTIZATION OF INVERSION LAYER IN A METAL-ON-INSULATOR FIELD-EFFECT TRANSISTOR

A simulator using a coupled Schrodinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is sho wn to match the measured capacitance versus voltage data of thin oxide gale metal-on-insulator capacitance closely. The effects of bias volt age, oxide thickness and doping concentration on the charge centroid a re presented. A simple empirical model for the alternating current cha rge centroid of the inversion layer is proposed. This model predicts t he in-version layer capacitance or charge centroid in terms of T-ox (o xide thickness), V/(t) (threshold voltage), and ii,, (gate voltage) ex plicitly. (C) 1998 American Institute of Physics.