INFLUENCE OF PARTIAL DOPANT IONIZATION ON THE CAPACITANCE-VOLTAGE PROFILES OF DELTA-DOPED STRUCTURES

The effects of partial dopant ionization on the capacitance-voltage (C -V) characteristics of delta-doped structures have been investigated u sing self-consistent simulations. The simulation results show that par tially ionized delta-doped dopants should produce a much sharper C-V p rofile compared with the case of fully ionized dopants. The results re veal also that the main factor which determines the spatial resolution and the full width at half maximum of the C-V peak is the spatial ext ent of the dopant profile rather than the spatial extent of the ground -state wave function. From this, it is suggested that the delta-doped C-V data should be interpreted always with the effect of partial ioniz ation of delta-doped dopants. (C) 1998 American Institute of Physics.