CHARACTERISTICS OF INAS ALGAAS SELF-ORGANIZED QUANTUM-DOT MODULATION-DOPED FIELD-EFFECT TRANSISTORS/

We have investigated the de characteristics of InGaAs/AlGaAs modulatio n doped field effect transistors in which a layer of self-organized In As quantum dots is inserted adjacent to the pseudomorphic quantum well channel. Distinct steps and a negative differential resistance are ob served in the current-voltage characteristics at room temperature and lower temperatures. These are attributed to conduction through the bou nd states in the quantum dots. (C) 1998 American Institute of Physics.