OBSERVATION OF CHEMICAL-SHIFTS OF SI 2P LEVEL BY AN X-RAY PHOTOELECTRON-SPECTROSCOPY SYSTEM WITH A LASER-PLASMA X-RAY SOURCE

An x-ray photoelectron spectroscopy system with a laser-plasma x-ray s ource is shown to have energy resolution high enough to observe chemic al shifts,of Si 2p electrons in SiO2, Si3N4, and pure Si. A boron nitr ide (BN) plasma x-ray sourer is produced by irradiation of 100 mJ Q-sw itched YAG laser pulses. A single Line emission at 4.86 nm is selected from the BN plasma by means of carbon foils. Fine spectra are acquire d with only 96 laser shots. The results obtained confirm that a labora tory-sized x-ray photoelectron spectroscopy system with submicron spat ial resolution and high spectral acquisition speed can be realized. (C ) 1998 American Institute of Physics.