MODIFICATION OF BAND OFFSETS BY A ZNSE INTRALAYER AT THE SI GE(111) INTERFACE/

In this letter, the use of an ordered ultrathin ZnSe dipole layer to s ignificantly modify the band discontinuity at the Si/Ge(III)-c(2x8) he terojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intr alayer increased the valence band offset by similar to 0.57 eV, as com pared to a negligible valence band offset for the Si/Ge(III)junction. This dramatic modification is interpreted in terms of the charge trans fer at the interface. (C) 1998 American Institute of Physics.