The influence of the dwell-time in focused ion beam synthesis has been
investigated. Cobalt disilicide layers have been produced by 70 keV C
o2+ implantation into silicon and have been investigated by Rutherford
backscattering spectroscopy and scanning electron microscopy. At an i
mplantation temperature of about 400 degrees C it is only possible to
form continuous CoSi2 layers using sufficiently short pixel dwell-time
s. This result is explained by :In enhanced damage accumulation for lo
nger dwell-times. (C) 1998 American Institute of Physics.