DOSE-RATE EFFECTS IN FOCUSED ION-BEAM SYNTHESIS OF COBALT DISILICIDE

Authors
HAUSMANN S BISCHOFF L TEICHERT J VOELSKOW M GRAMBOLE D HERRMANN F MOLLER W
Citation
S. Hausmann et al., DOSE-RATE EFFECTS IN FOCUSED ION-BEAM SYNTHESIS OF COBALT DISILICIDE, Applied physics letters, 72(21), 1998, pp. 2719-2721
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
21
Year of publication
1998
Pages
2719 - 2721
Database
ISI
SICI code
0003-6951(1998)72:21<2719:DEIFIS>2.0.ZU;2-A
Abstract
The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV C o2+ implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an i mplantation temperature of about 400 degrees C it is only possible to form continuous CoSi2 layers using sufficiently short pixel dwell-time s. This result is explained by :In enhanced damage accumulation for lo nger dwell-times. (C) 1998 American Institute of Physics.