LARGE BAND-GAP BOWING OF INXGA1-XN ALLOYS

Citation
Md. Mccluskey et al., LARGE BAND-GAP BOWING OF INXGA1-XN ALLOYS, Applied physics letters, 72(21), 1998, pp. 2725-2726
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
21
Year of publication
1998
Pages
2725 - 2726
Database
ISI
SICI code
0003-6951(1998)72:21<2725:LBBOIA>2.0.ZU;2-9
Abstract
Band gap measurements have been performed on strained InxGa1-xN epilay ers with x less than or equal to 0.12. The experimental data indicate that the bowing of the band gap is much larger than commonly assumed. We have performed first-principles calculations for the band gap as a function of alloy composition and find that the bowing is strongly com position dependent. lit x=0.125 the calculated bowing parameter is b=3 .5 eV, in good agreement with the experimental values. (C) 1998 Americ an Institute of Physics.