HIGH BANDWIDTH-EFFICIENCY RESONANT-CAVITY ENHANCED SCHOTTKY PHOTODIODES FOR 800-850 NM WAVELENGTH OPERATION

High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabrica ted in the AlGaAs/GaAs material system. The Schottky contact is a semi transparent Au film which also serves as the top reflector of the Fabr y-Perot cavity. The detectors exhibit a peak quantum efficiency of eta = 0.5 at lambda = 827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GH z. (C) 1998 American Institute of Physics.