THE FRACTION OF SUBSTITUTIONAL BORON IN SILICON DURING ION-IMPLANTATION AND THERMAL ANNEALING

We present results from a kinetic Monte Carlo simulation of boron tran sient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derive d mostly from ab initio calculations. The results predict that. during annealing of 40 keV B-implanted Si at 800 degrees C, there exists a t ime window during which all the implanted boron atoms are substitution al. Al earlier or later times, the interactions between free silicon s elf-interstitials and boron atoms drive the growth of boron clusters a nd result in an inactive boron fraction. The results show that the maj ority of boron TED takes place during the growth period of interstitia l clusters and not during their dissolution. (C) 1998 American Institu te of Physics.