Mj. Caturla et al., THE FRACTION OF SUBSTITUTIONAL BORON IN SILICON DURING ION-IMPLANTATION AND THERMAL ANNEALING, Applied physics letters, 72(21), 1998, pp. 2736-2738
We present results from a kinetic Monte Carlo simulation of boron tran
sient enhanced diffusion (TED) in silicon. Our approach avoids the use
of phenomenological fits to experimental data by using a complete and
self-consistent set of values for defect and dopant energetics derive
d mostly from ab initio calculations. The results predict that. during
annealing of 40 keV B-implanted Si at 800 degrees C, there exists a t
ime window during which all the implanted boron atoms are substitution
al. Al earlier or later times, the interactions between free silicon s
elf-interstitials and boron atoms drive the growth of boron clusters a
nd result in an inactive boron fraction. The results show that the maj
ority of boron TED takes place during the growth period of interstitia
l clusters and not during their dissolution. (C) 1998 American Institu
te of Physics.