STUDY OF GE BONDING AND DISTRIBUTION IN PLASMA OXIDES OF SI1-XGEX ALLOYS

Secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) absorption have been studied in thin oxides of Si1-xGex grown b y plasma oxidation, SIMS analysis reveals that Ge can migrate to the: oxide film surface leaving the oxide in the SiGe interface region Ge-d epleted, This is in contrast to thermally grown oxides. Water selectiv ely attacks the Ge-rich part of the oxide. In the FTIR spectra of the SiGe or;ides, specific peaks identified with the vibration of O in Si- O-Ge and Ge-O-Ge bonds have been observed for the first time, These la tter observations confirm that for the plasma oxidized films, the Ge i s chemically bonded in the oxide network. (C) 1998 American Institute of Physics.