MAGNETIC-PROPERTIES OF FE FILMS EPITAXIALLY GROWN ON CR GAAS(100) BY DC MAGNETRON SPUTTERING/

Citation
B. Li et al., MAGNETIC-PROPERTIES OF FE FILMS EPITAXIALLY GROWN ON CR GAAS(100) BY DC MAGNETRON SPUTTERING/, Applied physics letters, 72(21), 1998, pp. 2760-2762
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
21
Year of publication
1998
Pages
2760 - 2762
Database
ISI
SICI code
0003-6951(1998)72:21<2760:MOFFEG>2.0.ZU;2-8
Abstract
We report on the growth of single-crystal Fe films by magnetron sputte ring onto GaAs substrates. In order to establish the epitaxial orienta tion with the substrate a 100 Angstrom Cr buffer layer was rf sputtere d. The crystalline and magnetic properties were studied by x-ray diffr action, ferromagnetic resonance, and Kerr effect magnetometry techniqu es. The theta-2 theta x-my measurements show that only the Fe (200) pe ak is present, and the rocking curve shows a full width half maximum o f 2 degrees Ferromagnetic resonance lines exhibit a line width of abou t 30 Oe, and the in-plane resonance field as a function of the azimuth angle presents a fourfold symmetry with no induced anisotropy. The in -plane hard- and easy-axis magneto-optical hysteresis loop traces are consistent with the ferromagnetic resonance results. (C) 1998 American Institute of Physics.