AMPLIFIED SPONTANEOUS EMISSION-SPECTROSCOPY ON SEMICONDUCTOR OPTICAL AMPLIFIERS SUBJECT TO ACTIVE LIGHT INJECTION

Authors
DEBOER AP CHRISTIANEN PCM MAAN JC RASING T TOLSTIKHIN VI VANDEROER TG DEVRIEZE HM
Citation
Ap. Deboer et al., AMPLIFIED SPONTANEOUS EMISSION-SPECTROSCOPY ON SEMICONDUCTOR OPTICAL AMPLIFIERS SUBJECT TO ACTIVE LIGHT INJECTION, Applied physics letters, 72(23), 1998, pp. 2936-2938
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
23
Year of publication
1998
Pages
2936 - 2938
Database
ISI
SICI code
0003-6951(1998)72:23<2936:ASEOSO>2.0.ZU;2-D
Abstract
It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain conditions the carrier energy d istribution within the active layer of a AlGaAs/GaAs amplifier neither shows spectral hole burning nor carrier heating, but only a decreased density. (C) 1998 American Institute of Physics.