DOMAIN-STRUCTURE OF EPITAXIAL SRRUO3 THIN-FILMS ON MISCUT (001)SRTIO3SUBSTRATES

Citation
Jc. Jiang et al., DOMAIN-STRUCTURE OF EPITAXIAL SRRUO3 THIN-FILMS ON MISCUT (001)SRTIO3SUBSTRATES, Applied physics letters, 72(23), 1998, pp. 2963-2965
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
23
Year of publication
1998
Pages
2963 - 2965
Database
ISI
SICI code
0003-6951(1998)72:23<2963:DOESTO>2.0.ZU;2-3
Abstract
The microstructure of epitaxial SrRuO3 thin films grown on vicinal (00 1) SrTiO3 substrates with miscut angle of 1.9 degrees and miscut direc tion of 12 degrees away from [100] direction was studied using transmi ssion electron microscopy (TEM). Cross-section as well as plan-view TE M studies revealed that these films are single domain with the in-plan e epitaxial orientation relationship of SrRuO3[001]//SrTiO3[010] and S rRuO3[(1) over bar 10]//SrTiO3[100]. This result is in contrast to the previous studies of the SrRuO3 thin films grown on exactly (001) SrTi O3, which are composed of two types of [110] domains with nearly the s ame volume fraction. The occurrence of these different domain structur es is attributed to the step-flow growth of the film on the substrate surface due to the miscut. (C) 1998 American Institute of Physics.