INCORPORATION OF OXYGEN AND NITROGEN IN ULTRATHIN FILMS OF SIO2 ANNEALED IN NO

The areal densities of oxygen and nitrogen incorporated into ultrathin films of silicon dioxide during rapid thermal processing in nitric ox ide, as well as the regions where these incorporations took place, wer e determined by combining nuclear reaction analysis and narrow nuclear resonance depth profiling with isotopic enrichment of the processing gas, Oxygen is seen to incorporate in the near-surface and near-interf ace regions of the oxynitride films, whereas nitrogen is incorporated only in the near-interface regions. The growth of the oxynitride film is very moderate as compared to that of a SiO2 film in dry O-2. The th ermal oxynitridation of ultrathin SiO2 films takes place by two mechan isms in parallel: the major part of the NO molecules, which react with the silica, decompose in the near-surface region, the O atoms being e xchanged for O atoms preexistent in this region of the SiO2 films; a m inor portion of the NO molecules diffuse through the silica film in in terstitial sites, without reacting with it, to react at the oxynitride /Si interface. (C) 1998 American Institute of Physics.