GaN nanocrystals with an average diameter of 4.5 nm+/-1.6 nm were synt
hesized by pulsed laser ablation of a gallium metal target in a nitrog
en atmosphere. Transmission electron microscopy and selected area elec
tron diffraction confirmed the hexagonal structure and size of the nan
ocrystals. Optical absorption and photoluminescence spectroscopy revea
led quantum confined excited states in the nanocrystalline samples wit
h features at 4.43 eV (280 nm) and 5.47 eV (227 nm), (C) 1998 American
Institute of Physics.