ELECTRICAL CHARACTERIZATION OF THE THRESHOLD FLUENCE FOR EXTENDED DEFECT FORMATION IN P-TYPE SILICON IMPLANTED WITH MEV SI IONS

Preamorphous damage in p-type Si implanted with MeV Si ions and anneal ed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM), P-typ e Si was implanted with I MeV Si at doses from 1 x10(13) to 1x10(14) c m(-2) and annealed at 800 degrees C for 15 min. For doses below this c ritical dose, a sharp peak is observed in the DLTS spectrum, correspon ding to the signature of point defects, Above the critical dose, a bro ad DLTS peak is obtained, indicating the presence of extended defects. This behavior is found to be consistent with TEM analyses where exten ded defects are only observed for doses above the critical dose. This suggests a critical dose at which point defects from implantation act as nucleating sites for extended defect formation. (C) 1998 American I nstitute of Physics.