METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF SEMIINSULATING GAINASP(LAMBDA(G)=1.05 MU-M)FE OPTICAL WAVE-GUIDES FOR INTEGRATED PHOTONIC DEVICES

Iron doping of InP and GaInAsP(lambda(g)= 1.05 mu m) layers grown by m etalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell. This study was aimed at the creation of semi-insulating optical waveguides under growth conditions compatible with selective area growth. Secondary ion mass spectroscopy measurements revealed a reproducible and homogeneou s incorporation behavior of the iron dopant in the materials investiga ted. Resistivities in excess of 10(9) Omega cm were obtained for both compositions at medium doping levels. GaInAsP/InP waveguide structures grown at 485 degrees C-the minimum temperature necessary for selectiv e deposition-exhibited averaged resistivities of 5 x 10(7) Omega cm in combination with optical losses of 2.5+/-0.5 dB/cm. (C) 1998 American Institute of Physics. [S0003-6951 (98)04123-0].