LONG-WAVELENGTH (GA, IN)SB GASB STRAINED-QUANTUM-WELL LASERS GROWN BYMOLECULAR-BEAM EPITAXY/

Authors
BERTRU N BARANOV A CUMINAL Y ALMUNEAU G GENTY F JOULLIE A BRANDT O MAZUELAS A PLOOG KH
Citation
N. Bertru et al., LONG-WAVELENGTH (GA, IN)SB GASB STRAINED-QUANTUM-WELL LASERS GROWN BYMOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 13(8), 1998, pp. 936-940
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
8
Year of publication
1998
Pages
936 - 940
Database
ISI
SICI code
0268-1242(1998)13:8<936:L(IGSL>2.0.ZU;2-W
Abstract
The molecular beam epitaxy growth of strained (Ga, In)Sb/GaSb quantum wells is investigated, in a narrow range of growth conditions, (Ga, In )Sb quantum well structures exhibiting excellent structural properties as well as intense and narrow photoluminescence transitions are obtai ned. Stimulated emission at 1.98 mu m is observed at room temperature from laser diodes with Ga0.74In0.26Sb/GaSb; strained quantum wells as the active zone. The lasers exhibit threshold current densities as low as 280 A cm(-2) and a characteristic temperature of 75 K.