DAMAGE ENGINEERING AND PROXIMITY GETTERING OF METALS STUDIED BY ELECTRICAL MEASUREMENTS ON PT-CONTAMINATED DIODES

Authors
CACCIATO A RAINERI V
Citation
A. Cacciato et V. Raineri, DAMAGE ENGINEERING AND PROXIMITY GETTERING OF METALS STUDIED BY ELECTRICAL MEASUREMENTS ON PT-CONTAMINATED DIODES, Semiconductor science and technology, 13(8), 1998, pp. 941-949
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
8
Year of publication
1998
Pages
941 - 949
Database
ISI
SICI code
0268-1242(1998)13:8<941:DEAPGO>2.0.ZU;2-I
Abstract
We studied the characteristics of junction leakage currents of diodes having buried damage layers formed by high-energy B implantation. The efficiency of the buried layers was evaluated with respect to both mic rodefect dissolution and gettering of metal impurities. For this purpo se, some diodes were contaminated with a uniform concentration of Pt ( 1 x 10(14) cm(-3)). Results show that high-dose B implants are require d for efficient removal of defects and the gettering of metal impuriti es, while the annealing sequence is fundamental for correct damage eng ineering.