DC ELECTRICAL OXIDE THICKNESS MODEL FOR QUANTIZATION OF THE INVERSIONLAYER IN MOSFETS

A simulator using the coupled Schrodinger equation, the Poisson equati on and Fermi-Dirac statistics to analyse inversion-layer quantization has been shown to match the measured C-V data of thin-gate-oxide metal -oxide semiconductor (MOS) capacitors closely. This simulator is used to study in detail the effects of bias voltage, oxide thickness and do ping concentration on the charge centroid and from this a simple empir ical model for the do charge centroid of the inversion layer is propos ed, This model predicts the inversion charge density in terms of T-ox, V-t and V-g explicitly and can be used to estimate transistor current in device engineering and circuit simulation models.