FILM THICKNESS AND COMPOSITION MONITORING DURING GROWTH BY MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS

Authors
BEAUDOIN M ADAMCYK M GELBART Z GIESEN U KELSON I LEVY Y MACKENZIE JA TIEDJE T
Citation
M. Beaudoin et al., FILM THICKNESS AND COMPOSITION MONITORING DURING GROWTH BY MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS, Applied physics letters, 72(25), 1998, pp. 3288-3290
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
25
Year of publication
1998
Pages
3288 - 3290
Database
ISI
SICI code
0003-6951(1998)72:25<3288:FTACMD>2.0.ZU;2-S
Abstract
The alpha-particle energy loss method (AEL) has been implemented in si tu to monitor film thickness during growth by molecular beam epitaxy. For InP and GaAs substrates recoil implanted with alpha-particle emitt ers, we have been able to measure thickness and composition of deposit ed GaAs, AlGaAs and InGaAs in real time. The AEL method yields in situ real time results comparable in accuracy to those obtained by ex situ scanning electron microscope and high-resolution x-ray diffraction me asurements. (C) 1998 American Institute of Physics. [S0003-6951(98)028 25-3].