PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE

behavior of luminescence spectra and structural defects in single crys tal Czochralski silicon after erbium implantation at 1 MeV energy and 1x10(13) cm(-2) dose with subsequent annealing at 1100 degrees C for 0 .25-3 h in an argon or chlorine-containing ambience was studied by pho toluminescence (PL), transmission electron microscopy, and chemical et ching/Nomarski microscopy. We have found that annealing in the chlorin e-containing ambience gives rise to dislocation loops and pure edge di slocations with dominant dislocation-related lines in the PL spectrum. Pure edge dislocations are responsible for the appearance of the line s. The Er-related lines due to the intra-4f shell transitions in the r are-earth ions dominate in the IPL spectra and no structural defects a re observed after annealing in argon. The observed differences in the optical and structural properties of Si:Er are associated with intrins ic point defects generated during the implantation and annealing. (C) 1998 American Institute of Physics. [S0003-6951(98)01925-1].