DEPENDENCE OF THE DENSITY OF DEFECTS IN THE OXIDE ON CZOCHRALSKI SILICON ON ITS THICKNESS

The dependence of the density of defects in the oxide on Czochralski s ilicon substrates on its thickness is discussed quantitatively in term s of the shape and the size of the octahedral void defects. Oxide thin ning at corners of the void defects may be a dominant factor in the ox ide thickness dependence when oxide thickness is smaller than 50 nm. T he size distribution (80-160 nm) of the void defects may be a dominant factor in the oxide thickness dependence when oxide thickness is larg er than 50 nm, Model is presented to explain the mechanism of the two factors. (C) 1998 American Institute of Physics.