TERAHERTZ EMISSION OF POPULATION-INVERTED HOT-HOLES IN SINGLE-CRYSTALLINE SILICON

Authors
BRUNDERMANN E HALLER EE MURAVJOV AV
Citation
E. Brundermann et al., TERAHERTZ EMISSION OF POPULATION-INVERTED HOT-HOLES IN SINGLE-CRYSTALLINE SILICON, Applied physics letters, 73(6), 1998, pp. 723-725
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
6
Year of publication
1998
Pages
723 - 725
Database
ISI
SICI code
0003-6951(1998)73:6<723:TEOPHI>2.0.ZU;2-Z
Abstract
We report THz emission of hot-holes in p-type silicon doped with a bor on acceptor concentration of N-A=1.5x10(15) cm(-3). We apply crossed e lectric (E) and magnetic (B) fields to the crystal cooled to liquid he lium temperature. Optical gain is found for held ratios E/B in the ran ge 0.5-1 kV cm(-1) T-1. We calculate optical gain spectra in Si and id entify possible laser transitions. (C) 1998 American Institute of Phys ics.