Graphoepitaxial Ni50Ti50 films were grown on Si substrates by sputter
deposition of an alloy target. The microstructure evolution of the fil
m was investigated by hot stage atomic force microscopy. The topologic
al features of the martensitic graphoepitaxial Ni50Ti50 films are dire
ctly associated with etch pits on the surface of the silicon substrate
and exhibit facets with well-defined preferential in-plane orientatio
n. The highly ordered martensitic facets disappear as the film transfo
rms to austenite at elevated temperatures. (C) 1998 American Institute
of Physics.