KINETICS OF STRAIN RELAXATION THROUGH MISFIT DISLOCATION FORMATION INTHE GROWTH OF EPITAXIAL-FILMS ON COMPLIANT SUBSTRATES

Authors
MAROUDAS D ZEPEDARUIZ LA WEINBERG WH
Citation
D. Maroudas et al., KINETICS OF STRAIN RELAXATION THROUGH MISFIT DISLOCATION FORMATION INTHE GROWTH OF EPITAXIAL-FILMS ON COMPLIANT SUBSTRATES, Applied physics letters, 73(6), 1998, pp. 753-755
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
6
Year of publication
1998
Pages
753 - 755
Database
ISI
SICI code
0003-6951(1998)73:6<753:KOSRTM>2.0.ZU;2-8
Abstract
A phenomenological mean-field theory is presented for the kinetics of strain relaxation due to misfit dislocation generation in the strained -layer growth of epitaxial semiconductor films on thin compliant subst rate. The theory provides a generalized dislocation kinetic framework by couplings the mechanics of an epitaxial film on a compliant substra te with a well-known description of plastic deformation dynamics in se miconductor crystals. The theoretical results reproduce successfully r ecent experimental data for strain relaxation in the InAs/GaAs(110) he teroepitaxial system. (C) 1998 American Institute of Physics.