EFFECTS OF PRECIPITATE DISTRIBUTION ON ELECTROMIGRATION IN AL-CU THIN-FILM INTERCONNECTS

Citation
Jh. Han et al., EFFECTS OF PRECIPITATE DISTRIBUTION ON ELECTROMIGRATION IN AL-CU THIN-FILM INTERCONNECTS, Applied physics letters, 73(6), 1998, pp. 762-764
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
6
Year of publication
1998
Pages
762 - 764
Database
ISI
SICI code
0003-6951(1998)73:6<762:EOPDOE>2.0.ZU;2-C
Abstract
This letter reports that electromigration lifetimes of Al-2Cu (wt. %) thin-film conducting lines increase by more than three times when the lines are optimally aged to facilitate finely dispersed Al2Cu precipit ates in the interior of the grains. In contrast to other studies which did not report a beneficial aging effect for AI-Cu films, the present work substantiates the fact that proper control of Al2Cu precipitates improves resistance to electromigration failure. However, the benefit of aging the Al-2Cu lines investigated here was less pronounced and c onfined to a more narrow heat-treatment ''window'' than that previousl y found for the Al-2Cu-1Si lines. (C) 1998 American Institute of Physi cs.