Jh. Han et al., EFFECTS OF PRECIPITATE DISTRIBUTION ON ELECTROMIGRATION IN AL-CU THIN-FILM INTERCONNECTS, Applied physics letters, 73(6), 1998, pp. 762-764
This letter reports that electromigration lifetimes of Al-2Cu (wt. %)
thin-film conducting lines increase by more than three times when the
lines are optimally aged to facilitate finely dispersed Al2Cu precipit
ates in the interior of the grains. In contrast to other studies which
did not report a beneficial aging effect for AI-Cu films, the present
work substantiates the fact that proper control of Al2Cu precipitates
improves resistance to electromigration failure. However, the benefit
of aging the Al-2Cu lines investigated here was less pronounced and c
onfined to a more narrow heat-treatment ''window'' than that previousl
y found for the Al-2Cu-1Si lines. (C) 1998 American Institute of Physi
cs.