EFFECT OF THE SILICON TOP LAYER OF SILICON IMPLANTED WITH OXYGEN ON THE UPTAKE AND RELEASE OF DEUTERIUM BY THE BURIED OXIDE

The effect of the silicon top layer on the uptake and release of deute rium by silicon implanted with oxygen (SIMOX) was studied using therma l desorption measurements. The deuterium is incorporated in the buried oxide by disruption of the Si-O bridging bonds. The data reveal that the top layer reduces the uptake at 1073 K. Furthermore, it retards re lease; a moderate (approximate to 1125 K) and a high-temperature (appr oximate to 1400 K) retention were observed. It is proposed that releas e is accompanied by the reconstruction of the Si-O bonds and that the bare oxide surface constitutes an abundant source for defects thus enh ancing the generation and elimination of Si-O bridging bond defects. ( C) 1998 American Institute of Physics.