MOTT TRANSITION FIELD-EFFECT TRANSISTOR

Authors
NEWNS DM MISEWICH JA TSUEI CC GUPTA A SCOTT BA SCHROTT A
Citation
Dm. Newns et al., MOTT TRANSITION FIELD-EFFECT TRANSISTOR, Applied physics letters, 73(6), 1998, pp. 780-782
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
6
Year of publication
1998
Pages
780 - 782
Database
ISI
SICI code
0003-6951(1998)73:6<780:MTFT>2.0.ZU;2-D
Abstract
A field effect transistor fabricated with an oxide channel has been sh own to demonstrate switching characteristics similar to conventional s ilicon metal oxide field effect transistors. This device is believed t o operate via a Mott metal-insulator transition induced by the gate fi eld, and offers a potential technology alternative for the regime beyo nd silicon scaling limitations. (C) 1998 American Institute of Physics .