FATIGUE CHARACTERISTICS OF SRBI2TA2O9 THIN-FILMS PREPARED BY METALORGANIC DECOMPOSITION

Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthes ized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electr ic measurements demonstrate that fatigue increases with decreasing swi tching voltage and frequency, and the suppressed polarization caused a t a lower switching voltage can be recovered by switching at a higher voltage. This suggests that the domain walls of SET thin films are wea kly pinned and easily depinned by a higher external field. The polariz ation of SET thin films annealed in air shows more degradation than th at annealed in oxygen, which indicates that the oxygen vacancy also pl ays an important role in fatigue behavior of SET thin films. (C) 1998 American Institute of Physics. [S0003-6951(98)01032-8].