TIME-RESOLVED SPECTROSCOPY OF INXGA1-XN GAN MULTIPLE-QUANTUM WELLS ATROOM-TEMPERATURE/

Authors
POPHRISTIC M LONG FH TRAN C KARLICEK RF FENG ZC FERGUSON IT
Citation
M. Pophristic et al., TIME-RESOLVED SPECTROSCOPY OF INXGA1-XN GAN MULTIPLE-QUANTUM WELLS ATROOM-TEMPERATURE/, Applied physics letters, 73(6), 1998, pp. 815-817
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
6
Year of publication
1998
Pages
815 - 817
Database
ISI
SICI code
0003-6951(1998)73:6<815:TSOIGM>2.0.ZU;2-3
Abstract
We have measured the time-resolved photoluminescence (PL) from a serie s of InxGa1-xN/GaN (x= 0.22) multiple quantum well structures at room temperature. Lifetimes longer than 1 ns ( 1.87 +/- 0.02 ns) were measu red at room temperature. The emission lifetime was found to lengthen w ith increasing excitation power, this is attributed to the saturation of recombination centers. The PL decay kinetics were found to be quite sensitive to the emission wavelength. The energy dependence of the em ission lifetime is attributed to nanoscale fluctuations in the indium concentration. (C) 1998 American Institute of Physics. [S0003-6951(98) 01732-X].