MOBILITY OF 2-DIMENSIONAL ELECTRONS IN ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/

We present quantitative calculations of the electron drift mobility in wurtzite (WZ) and zincblende (ZB) structure n-type AlGaN/GaN modulati on-doped field-effect transistors. The two-dimensional character of th e quantum confined carriers as well as spontaneous and piezoelectric e lectric field effects are fully taken into account. For given doping c oncentration, we find that the internal electric fields lead to a much stronger carrier confinement and higher channel densities than in sta ndard III-V materials. For high quality n-type heterostructures, we pr edict a room temperature mobility at high densities close to 2000 cm(2 )/V s. (C) 1998 American Institute of Physics. [S0003-6951(98)01932-9] .