ISSUES IN HIGH-VOLUME COMPOUND SEMICONDUCTOR EPITAXY

Authors
PARSEY JM
Citation
Jm. Parsey, ISSUES IN HIGH-VOLUME COMPOUND SEMICONDUCTOR EPITAXY, JOM (1989), 50(8), 1998, pp. 32-33
Citations number
NO
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Material Science",Mineralogy
Journal title
JOM (1989) → ACNP
ISSN journal
10474838
Volume
50
Issue
8
Year of publication
1998
Pages
32 - 33
Database
ISI
SICI code
1047-4838(1998)50:8<32:IIHCSE>2.0.ZU;2-0