THE HIGH-VOLUME PRODUCTION OF HETEROJUNCTION BIPOLAR-TRANSISTORS

The insertion of advanced microwave devices into high-volume applicati ons is critically dependent upon a robust and reproducible epitaxial g rowth technology accompanied with a reproducible process technology. T he precise control of the material and device parameters is essential to maintain a high-yield process, which leads to a low-cost product. A lthough AlGaAs/GaAs heterojunction bipolar transistors have been widel y demonstrated in many company research laboratories and universities, the transition from a laboratory environment to high-volume productio n requires a thorough understanding of the metalorganic chemical vapor deposition growth process and its correlation with device performance . In this work, high-performance AlGaAs/GaAs heterojunction bipolar tr ansistors grown by MOCVD with excellent control in the device paramete r tolerances have been demonstrated in very high volumes.